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Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond
A Diamond: H/WO 3 Metal–Oxide–Semiconductor Field-Effect Transistor
Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer
Transparent, Flexible, All-Reduced Graphene Oxide Thin Film Transistors
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The Australian National University, Canberra
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